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Ferroelectric Random Access Memories: Fundamentals and Applications [Hardcover]

Hiroshi Ishiwara , Masanori Okuyama , Yoshihiro Arimoto

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Book Description

April 16 2004 3540407189 978-3540407188 2004

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.


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From the Back Cover

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.


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First Sentence
The recent development of ferroelectric random access memories (FeRAMs) has shown that extremely high-density ferroelectric memory devices (ULSI) will become commercially feasible within the next few years [1,2,3]. Read the first page
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Front Cover | Copyright | Table of Contents | Excerpt | Index | Back Cover
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