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Solid State Electronic Devices [Textbook Binding]

Ben G. Streetman
3.1 out of 5 stars  See all reviews (9 customer reviews)

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Book Description

January 1988 Prentice Hall series in solid state physical electronics
For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
--This text refers to the Hardcover edition.

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From the Inside Flap


This book is an introduction to semiconductor devices for undergraduate electrical engineers, other interested students, and practicing engineers and scientists whose understanding of modern electronics needs updating. The book is organized to bring students with a background in sophomore physics to a level of understanding which will allow them to read much of the current literature on new devices and applications.


An undergraduate course in electronic devices has two basic purposes: (1) to provide students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful; and (2) to develop the basic tools with which they can later learn about newly developed devices and applications. Perhaps the second of these objectives is the more important in the long run; it is clear that engineers and scientists who deal with electronics will continually be called upon to learn about new devices and processes in the future. For this reason, we have tried to incorporate the basics of semiconductor materials and conduction processes in solids, which arise repeatedly in the literature when new devices are explained. Some of these concepts are often omitted in introductory courses, with the view that they are unnecessary for understanding the fundamentals of junctions and transistors. We believe this view neglects the important goal of equipping students for the task of understanding a new device by reading the current literature. Therefore, in this text most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices.

Reading Lists

As a further aid in developing techniques for independent study, the reading list at the end of each chapter includes a few articles which students can read comfortably as they study this book. Some of these articles have been selected from periodicals such as Scientific American and Physics Today, which specialize in introductory presentations. Other articles chosen from books and the professional literature provide a more quantitative treatment of the material. We do not expect that students will read all articles recommended in the reading lists; nevertheless, some exposure to periodicals is useful in laying the foundation for a career of constant updating and self-education.


One of the keys to success in understanding this material is to work problems that exercise the concepts. The problems at the end of each chapter are designed to facilitate learning the material. Very few are simple "plug-in" problems. Instead, they are chosen to reinforce or extend the material presented in the chapter.


In keeping with the goals described above, examples and problems are stated in terms of units commonly used in the semiconductor literature. The basic system of units is rationalized MKS, although cm is often used as a convenient unit of length. Similarly, electron volts (eV) are often used rather than joules (J) to measure the energy of electrons. Units for various quantities are given in Appendices I and II.


In presenting this material at the undergraduate level, one must anticipate a few instances which call for a phrase such as "It can be shown. . ." This is always disappointing; on the other hand, the alternative is to delay study of solid state devices until the graduate level, where statistical mechanics, quantum theory, and other advanced background can be freely invoked. Such a delay would result in a more elegant treatment of certain subjects, but it would prevent undergraduate students from enjoying the study of some very exciting devices.

The discussion includes both silicon and compound semiconductors, to reflect the continuing growth in importance for compounds in optoelectronic and high-speed device applications. Topics such as heterojunctions, lattice matching using ternary and quaternary alloys, variation of band gap with alloy composition, and properties of quantum wells add up to the breadth of the discussion. Not to be outdone by the compounds, silicon-based devices have continued their dramatic record of advancement. The discussion of FET structures and Si integrated circuits reflects these advancements. Our objective is not to cover all the latest devices, which can only be done in the journal and conference literature. Instead, we have chosen devices to discuss which are broadly illustrative of important principles.

The first four chapters of the book provide background on the nature of semiconductors and conduction processes in solids. Included is a brief introduction to quantum concepts (Chapter 2) for those students who do not already have this background from other courses. Chapter 5 describes the p-n junction and some of its applications. Chapters 6 and 7 deal with the principles of transistor operation. Chapter 8 covers optoelectronics and Chapter 9 discusses integrated circuits. Chapters 10 and 11 apply the theory of junctions and conduction processes to microwave and power devices. All of the devices covered are important in today's electronics; furthermore, learning about these devices should be an enjoyable and rewarding experience. We hope this book provides that kind of experience for its readers.


The fifth edition benefits greatly from comments and suggestions provided by students and teachers of the first four editions. The book's readers have generously provided comments which have been invaluable in developing the present version. We remain indebted to those persons mentioned in the Preface of the first four editions, who contributed so much to the development of the book. In particular, Nick Holonyak has been a source of continuing information and inspiration for all five editions. Additional thanks go to our colleagues at UT-Austin who have provided special assistance, particularly Joe Campbell, Ray Chen, Dennis Deppe, Russ Dupuis, Archie Holmes, Dim-Lee Kwong, Jack Lee, Christine Maziar, Dean Neikirk, and Al Tasch. Kay Shores and Qingyou Lu provided useful assistance with the typing. We thank the many companies and organizations cited in the figure captions for generously providing photographs and illustrations of devices and fabrication processes. Kobi Benzvi and Pradipto Mukherjee at Motorola, Shubneesh Batra and Mary Miller at Micron, and Tom Way at IBM deserve special mention. Finally, we recall with gratitude many years of association with the late Greg Stillman, a valued colleague and friend.

Ben G. Streetman
Sanjay Banerjee --This text refers to an out of print or unavailable edition of this title.

From the Back Cover

This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.


  • NEW—Thoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices.
  • NEW—Expanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1).
  • NEW—Clearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4).
  • NEW—Consolidated coverage of p-n junction diodes and its applications (Ch. 5).
  • NEW—Greatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices).
  • NEW—Earlier discussion of MOS devices (Ch. 6)—Ahead of bipolar junction transistors—reflects the preponderance of complementary MOS field effect transistors (MOSFETs) in integrated circuits today.
  • NEW—Major revision of chapter on Field Effect Transistors (Ch. 6)—Both in the underlying theory as well as discussion of a variety of short channel, high field and hot carrier effects in scaled, ultra-small MOSFETs. Includes extensive discussions of the current-voltage and capacitance-voltage characteristics of these devices—and the information that can be gleaned from such measurements.
  • NEW—Updated chapter on Bipolar Junction Transistors (BJTs) (Ch. 7)—To reflect current technology. Describes higher-order effects (including the Kirk effect and Webster effect); discusses the Gummel-Poon model (which is more elaborate and physically more accurate than the Ebers-Moll model); and updates the fabrication aspects of BJTs.
  • NEW—Consolidated coverage of optoelectronic devices in a single chapter (Ch. 8)—Brings the discussion of semiconductor lasers into the same chapter as LEDs and detectors
  • Reflects the growing importance of optoelectronics.
  • NEW—Updated coverage of integrated circuits (Ch. 9)—Eliminates outdated material on bipolar processes to reflect the concerted shift to CMOS applications, such as logic and memory integrated circuits.
  • NEW—A section on the insulated gate bipolar transistor (Ch. 11)—A device that is gradually supplanting the semiconductor-controlled rectifier.
  • NEW—Real data—Wherever feasible, replaces idealized current-voltage and capacitance-voltage plots with real data.
--This text refers to an out of print or unavailable edition of this title.

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Customer Reviews

Most helpful customer reviews
1 of 1 people found the following review helpful
By A Customer
This is one of those books that looks serious but you start reading it and what you find is "holes" and "gaps": there is always something either missing or represented in an "upside-down" way. This book might be useful only if you already know this stuff and using it for reviewing.
- No solutions (not even to selected problems) and just few insufficient examples inside the chapters.
- No summaries and no prefaces: as you read, you never know where the author is going- and in the end of a chapter(which are too long) you alreay can't remember what you've read.
- Conceptual parts are either oversimplified, explained ambiguously or simply omitted
- Lots of equations/formulas but the author doesn't help in making them more intuitive or meaningful; also derivations are far from the best
- Even the logical order and organization of contents is confusing
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1 of 1 people found the following review helpful
3.0 out of 5 stars OK for intermediate level Jan. 17 2001
I just finished a course in which this textbook was used. I found that the descriptions started at a non-introductory level and were not in-depth enough. I also thought more graphics were needed to illustrate how and where the e- and h+ move during different regions of transistor operation.
I bought R.F. Pierret's "Semiconductor Device Fundamentals" as a supplementary text and ended up reading and understanding that much more.
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5.0 out of 5 stars Streetman is Awesome! March 19 2002
By S. Bank
I used this book (4th Ed.) for the solid state device class at The University of Illinois (U-C), as a junior. Streetman offers excellent explanations and it is a great reference to me even now! While you have to read it a few times to fully grasp the subject, that is a function of the material and not the writing.
When the 5th Ed. came out, I instantly went out and purchased it! The advanced device sections were updated, while the basics were left virtually untouched. In keeping with the original, Banerjee provides clear explanations of more recent phenomana - mainly in the MOSFET section. This came in handy studying for the qual!!!
Personally, Streetman and Pierret are the only device books I need.
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2.0 out of 5 stars Just finding equations Nov. 4 2001
What would really improve this text is if lessons towards the end of the text, chapters 6 and on, included the equations from previous chapters so the reader could get a general understanding of the material needed to the problems in the text.
Also, it would be nice if the text included sample problems like the first 20-25 problems at the end of the chapters. Finally, I would like to see calculation of intrinsic amounts of carriers. Every time I do it I get something far from what the text uses in its problems.
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2.0 out of 5 stars Nebulous purpose Feb. 26 2001
I am a Senior in EE at the University of Florida, and I used this book in a semiconductor class. This book is too much for beginners, and too less for advanced students. They give some helpful equations, but they NEVER explain the concepts nicely. I essentially went through the course living off of equation sheets. Eventually, after using the same ones over and over, I started to undrestand what it was saying, but this book is useless in UNDERSTANDING the material, for it assumes you already know it.
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